The current understanding of charge transfer dynamics in Charge-CoupledDevices (CCDs) is that charge is moved so quickly from one phase to the next ina clocking sequence and with a density so low that trapping of charge in theinter-phase regions is negligible. However, new simulation capabilitiesdeveloped at the Centre for Electronic Imaging, that includes direct input ofelectron density simulations, has made it possible to investigate thisassumption further. As part of the radiation testing campaign of the EuclidCCD273 devices, data has been obtained using the trap pumping method, that canbe used to identify and characterise single defects CCDs. Combining this datawith simulations, we find that trapping during the transfer of charge betweenphases is indeed necessary in order to explain the results of the dataanalysis. This result could influence not only trap pumping theory and how trappumping should be performed, but also how a radiation damaged CCD is read outin the most optimal way.
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